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TIP110 |
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| Part Number | TIP110 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 2A ·Complement to ... |
| Features |
/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
TIP110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
60
V
VCE(sat)
Collector-Emitter Saturation Voltage IC= 2A, IB= 8mA
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 2A; VCE= 4V
2.8
V
ICBO
Collector Cutoff Current
VCB= 60V, IE= 0
1.0 mA
ICEO
Collector Cutoff Current
VCE= 30V, IB... |
| Document |
 TIP110 Data Sheet
PDF 209.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP110 |
MCC |
Silicon NPN Darlington Power Transistor |
|
| 2 | TIP110 |
RECTRON |
Power Transistors |
|
| 3 | TIP110 |
Motorola |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 4 | TIP110 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|
| 5 | TIP110 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|