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BDX53A |
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| Part Number | BDX53A |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BD... |
| Features |
iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 12mA
VECF
C-E Diode Forward Voltage
IF= 3A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 3V
BDX53A
MIN TYP... |
| Document |
 BDX53A Data Sheet
PDF 210.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX53 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | BDX53 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS |
|
| 3 | BDX53 |
TRANSYS |
NPN Transistor |
|
| 4 | BDX53 |
INCHANGE |
NPN Transistor |
|
| 5 | BDX53 |
Comset Semiconductors |
SILICON POWER DARLINGTON TRANSISTORS |
|