BD951 |
Part Number | BD951 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD952 ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
Features |
CTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 4V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= 80V; IE= 0
VCB= 40V; IE= 0,TJ=150℃ VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 500mA ; VCE= 4V
hFE-2
DC Current... |
Document |
BD951 Data Sheet
PDF 206.58KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD950 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
2 | BD950 |
CDIL |
PNP PLASTIC POWER TRANSISTOR | |
3 | BD950F |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
4 | BD951 |
CDIL |
NPN PLASTIC POWER TRANSISTOR | |
5 | BD951F |
Inchange Semiconductor |
Silicon NPN Power Transistor |