BD933F |
Part Number | BD933F |
Manufacturer | INCHANGE |
Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934F/936F/938F/940F/942F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f... |
Features |
Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD933F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD935F BD937F IC= 30mA ; IB= 0 BD939F
BD941F
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) ICBO ICEO
Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
IC= 1A; VCE= 2V
VCB= VCBOmax; IE= 0 VCB= VCBOmax; I... |
Document |
BD933F Data Sheet
PDF 209.63KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD933 |
NXP |
Silicon Epitaxial Power Transistors | |
2 | BD933 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | BD933F |
NXP |
Silicon Epitaxial Power Transistors | |
4 | BD9300 |
Rohm |
1-channel DC/DC converter controller | |
5 | BD9300F |
Rohm |
Step-down Switching Regulators |