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2SD2196 |
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| Part Number | 2SD2196 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable ... |
| Features |
er Transistor
2SD2196
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, IB= 30mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A, IB= 30mA
ICBO
Collector Cutoff current
VCB= 200V, IE= 0
ICEO
Collector Cutoff current
VCE= 200V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
fT
Current-Gain—Bandwidth Product IC= 1.5A; VCE= 10V
hFE
DC Current Gain
IC= 10A; VCE= 3V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC = 10A,IB1 = IB2= 30mA; RL= 3Ω; VBB2= 4V
M... |
| Document |
 2SD2196 Data Sheet
PDF 200.14KB |
| Distributor | Stock | Price | Buy |
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