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2SD1880 |
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| Part Number | 2SD1880 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
e IC= 50mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
5.0
V
1.5
V
10 μA
ICES
Collector Cutoff Current
VCE= 1300V ; RBE= 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
40
130 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
8
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
5
10
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 8A
IC= 6A , IB1= 1.2A ; IB2= -2.4A PW=20μs; Duty Cycle≤1%
2.0
V
0.3 μs
NOTICE： ISC reserves the rights to... |
| Document |
 2SD1880 Data Sheet
PDF 211.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD188 |
SavantIC |
Silicon NPN Power Transistor |
|
| 2 | 2SD188 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1880 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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| 4 | 2SD1880 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1881 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|