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2SD1710 |
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| Part Number | 2SD1710 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizont... |
| Features |
ation Voltage IC= 4.5A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
tf
Fall Time
IC= 0.5A ; VCE= 5V
IC= 4A , IB1= 0.8A ; IB2= 1.6A PW=20μs; Duty Cycle≤1%
2SD1710
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
1.0 mA
1.0 mA
8
0.5 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pres... |
| Document |
 2SD1710 Data Sheet
PDF 212.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1710 |
MCC |
NPN Silicon Power Transistors |
|
| 2 | 2SD1710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD1710 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SD1710A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | 2SD1710C |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|