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2SD1193 |
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| Part Number | 2SD1193 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 7.0A ·Low Saturation Voltage ·Complement to Type 2SB883 ·Minimum Lot-to-Lot variations for robust... |
| Features |
AMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 14mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 7A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 7A; VCE= 5V
2SD1193
MIN TYP. MAX UNIT
60
V
70
V
1.5
V
2.0
V
0.1
mA
3.0
mA
2000
20
MHz
NOTICE： ISC reserves the rights to make changes of the... |
| Document |
 2SD1193 Data Sheet
PDF 212.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1190 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 2 | 2SD1190 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD1191 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 4 | 2SD1191 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1192 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|