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TIC226 |
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| Part Number | TIC226 |
| Manufacturer | INCHANGE |
| Description | ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
| Features |
Case
Rth j-a
Thermal Resistance,Junction to Ambient
TYP MAX UNIT 1.8 ℃/W 62.5 ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IRRM IDRM
Repetitive peak reverse current Repetitive peak off-state current
Ⅰ
VRM=VRRM,
VRM=VRRM, Tj=110℃
VDM=VDRM,
VDM=VDRM, Tj=110℃
IGT
Gate trigger current
Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Ⅲ
Ⅳ
IH
Holding current
Vsupply = 12 V†,IG= 0 initial ITM=100mA
VGT
Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
VTM On-state voltage
IT= 12A; IG= 50mA
TYP MAX UNIT
0.4 2.0
mA
0.4 ... |
| Document |
 TIC226 Data Sheet
PDF 181.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC225 |
BOURNS |
SILICON TRIACS |
|
| 2 | TIC225 |
Power Innovations Limited |
SILICON TRIACS |
|
| 3 | TIC225 |
INCHANGE |
Triac |
|
| 4 | TIC225A |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 5 | TIC225B |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|