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NTE68 |
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| Part Number | NTE68 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -800mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A
VBE(on) Base-Emitter On Voltage
IC= -8A; VCE=-4V
VCBO
Collector-Base Breakdown Voltage
IC= -1mA; IB= 0
VCEO
Collector-Emitter Breakdown Voltage IC=-100mA;IE=0
VEBO
Emitter-Base Breakdown Voltage
IE=-1mA;IB= 0
ICEO
Collector Cutoff Current
VCE= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -8A; VCE= -4V
hFE-2
DC Current Gain
IC= -16A; VCE= -4V
MIN TYP. MAX UNI... |
| Document |
 NTE68 Data Sheet
PDF 181.95KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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