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KSH122I |
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| Part Number | KSH122I |
| Manufacturer | INCHANGE |
| Description | ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP122 ·DPAK for surface mount applications ·Lead formed for surface mount applications(NO suffix) ·Straight lead... |
| Features |
trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
KSH122I
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=8A; IB= 80mA
VBE(on)* Base-Emitter On Voltage
IC= 4A; VCE= 4V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1*
DC Curr... |
| Document |
 KSH122I Data Sheet
PDF 210.25KB |
| Distributor | Stock | Price | Buy |
|---|
