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BLD137DL |
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| Part Number | BLD137DL |
| Manufacturer | INCHANGE |
| Description | ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCBO
Collector-Base Voltage
IC= 1mA; IE= 0
VEBO
Emitter-Base Voltage
IE= 1mA; IC= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A;VCE= 2V
ICBO
Collector Cutoff Current
VCB= 400V
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
hFE-3
DC Current Gain
IC= ... |
| Document |
 BLD137DL Data Sheet
PDF 184.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BLD137D |
Shenzhen SI Semiconductors |
BLD SERIES TRANSISTORS |
|
| 2 | BLD135D |
Shenzhen SI Semiconductors |
NPN Transistor |
|
| 3 | BLD139D |
Shenzhen SI Semiconductors |
BLD TRANSISTOR |
|
| 4 | BLD139D |
Red Diamond Optoelctronics |
BLD TRANSITOR |
|
| 5 | BLD139D |
SI Semiconductors |
BLD SERIES TRANSISTORS |
|