BD647F |
Part Number | BD647F |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD648F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as compleme... |
Features |
i is registered trademark
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD647F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0 VCB= 50V; IE= 0; TC= 150℃
ICEO
Collector Cutoff... |
Document |
BD647F Data Sheet
PDF 210.05KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD647 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS | |
2 | BD647 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BD647 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
4 | BD647 |
INCHANGE |
NPN Transistor | |
5 | BD640CS |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |