BD647F INCHANGE NPN Transistor Datasheet, en stock, prix

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BD647F

INCHANGE
BD647F
BD647F BD647F
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Part Number BD647F
Manufacturer INCHANGE
Description ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD648F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as compleme...
Features i is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD647F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 50V; IE= 0; TC= 150℃ ICEO Collector Cutoff...

Document Datasheet BD647F Data Sheet
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