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BD332 |
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| Part Number | BD332 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Complement to type BD331 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PNP epitaxial base transistors in monolithic Darlingt... |
| Features |
INCHANGE Semiconductor
BD332
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A; IB= -12mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -3A; VCE= -3V
VCB= -60V; IE= 0 VCB= -60V; IE= 0,TC=150℃
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC= -0.5A; VCE= -3V
hFE-2*
DC Current Gain
IC= -3A; VCE=-3V
hFE-3*
DC Current Gain
IC= -6A; VCE= -3V
*:Measured under pulse conditions:tp<300u... |
| Document |
 BD332 Data Sheet
PDF 206.52KB |
| Distributor | Stock | Price | Buy |
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