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BD331 |
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| Part Number | BD331 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Complement to type BD332 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlingt... |
| Features |
NGE Semiconductor
BD331
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; VCE= 3V
VCB= 60V; IE= 0 VCB= 60V; IE= 0,TC=150℃
VEB= 5V; IC= 0
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 3V
hFE-2*
DC Current Gain
IC= 3A; VCE=3V
hFE-3*
DC Current Gain
IC= 6A; VCE= 3V
*:Measured under pulse conditions:tp<300us,σ<2%
MIN TYP. MA... |
| Document |
 BD331 Data Sheet
PDF 205.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD330 |
NXP |
PNP power transistor |
|
| 2 | BD330 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | BD331 |
ST Microelectronics |
Complementary Power Darlingtons |
|
| 4 | BD331 |
NXP |
Silicon Darlington Power Transistors |
|
| 5 | BD332 |
ST Microelectronics |
Complementary Power Darlingtons |
|