3DD13009 INCHANGE NPN Transistor Datasheet, en stock, prix

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3DD13009

INCHANGE
3DD13009
3DD13009 3DD13009
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Part Number 3DD13009
Manufacturer INCHANGE
Description ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A ·100% tested ·Minimum Lot-to-...
Features perature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A ;IB= 1A VBE(sat)-2 Base-Emitte...

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