3DD167D INCHANGE NPN Transistor Datasheet, en stock, prix

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3DD167D

INCHANGE
3DD167D
3DD167D 3DD167D
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Part Number 3DD167D
Manufacturer INCHANGE
Description ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION...
Features PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 10mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A VBE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A ICEO Collector Cutoff Current VCE=100V; IE= 0 hFE DC Current Gain IC= 7.5A; VCE= 5V MIN MAX UNIT 250 V 200 V 5 V 1.5 V 1.8 V 2 mA 15 120 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat...

Document Datasheet 3DD167D Data Sheet
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