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FDA28N50 |
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| Part Number | FDA28N50 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDA28N50 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 28 17 112 PD Total Dissipation 310 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARA... |
| Document |
 FDA28N50 Data Sheet
PDF 205.41KB |
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