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SPA07N60CFD |
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| Part Number | SPA07N60CFD |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA07N60CFD ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 6.6 4.3 17 PD Total Dissipation @TC=25℃ 32 Tj Max. Operating Junction Temperature 150 Tstg Storage ... |
| Document |
 SPA07N60CFD Data Sheet
PDF 196.85KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA07N60CFD |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPA07N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPA07N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPA07N60C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPA07N65C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|