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1N5376B |
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| Part Number | 1N5376B |
| Manufacturer | Eris |
| Description | 1N53xxB 1.0 (25.4) MIN. .052 (1.3) DIA. .048 (1.2) 5W Zener Diode .375 (9.5) .335 (8.5) 1.0 (25.4) MIN. .220 (5.6) DIA. .197 (5.0) Ordering Information Part Number Compound 1N53xxB General ... |
| Features |
‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipat ‧For use in stabilizing and clipping circuits
with high power rating
Absolute Maximum Ratings
Parameter DC Power Dissipation at TL = 75 °C (Note1) Maximum Forward Voltage at IF = 1 A. Junction Temperature Range Storage Temperature Range Note: (1) TL = Lead temperature at 3/8 " (9.5mm) from body.
Symbol PD VF TJ TSTG
PRIMARY CHARACTERISTICS
VRRM VF
TJ max
6.2~200V 1.2V 150°C
Mechanical Data
‧Case : DO-201AD ‧Epoxy : UL94V-0 rate flame retardant ‧Lead : Axial lead solderable per MI... |
| Document |
 1N5376B Data Sheet
PDF 146.46KB |
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