AOI950A70 |
Part Number | AOI950A70 |
Manufacturer | Alpha & Omega Semiconductors |
Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMP... |
Features |
C
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS VGS
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
Maximum 700 ±20 ±30 5 3.2 20 0.8 0.3 7.5 100 20 56.5 0.45
-55 to 150
300
Units V V V
A
A mJ mJ V/ns W W/°C °C
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD.F
Symbol RqJA RqCS RqJC
Typical 45 1.6
Maximum 55 0.5 2.2
Units... |
Document |
AOI950A70 Data Sheet
PDF 446.05KB |
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