AOT360A70L |
Part Number | AOT360A70L |
Manufacturer | Alpha & Omega Semiconductors |
Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMP... |
Features |
rrent C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
±30
12
12*
7.6
7.6*
48
3.4
5.8
50 100 20
TC=25°C Power Dissipation B Derate above 25°C
PD
156
29.5
1.25
0.23
Units V V V
A
A mJ mJ V/ns W W/°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
R... |
Document |
AOT360A70L Data Sheet
PDF 669.34KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AOT380A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor | |
2 | AOT3N100 |
INCHANGE |
N-Channel MOSFET | |
3 | AOT3N100 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
4 | AOT3N50 |
INCHANGE |
N-Channel MOSFET | |
5 | AOT3N50 |
Alpha & Omega Semiconductors |
3A N-Channel MOSFET |