BZX384C3V9 |
Part Number | BZX384C3V9 |
Manufacturer | TAITRON |
Description | Value Unit Conditions *Ptot IFSM TJ Power Dissipation Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction Temperature 200 2.0 150 ... |
Features |
• Planar Die construction • 200mW Power Dissipation • Zener Voltage 3.9v to 75v • Ideally Suited for Automated Assembly Processes • RoHS Compliance Mechanical Data SOD-323F Case: SOD-323F, molded plastic Epoxy: Plastic package has UL flammability 94V-0 Terminals: Solderable per MIL-STD-202G,Method 208 Polarity: Color band denotes cathode Approx Weight: 0.0041 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit Conditions *Ptot IFSM TJ Power Dissipation Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JE... |
Document |
BZX384C3V9 Data Sheet
PDF 296.26KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BZX384C3V0 |
Vishay |
Small Signal Zener Diodes | |
2 | BZX384C3V0 |
SunMate |
SURFACE MOUNT SILICON ZENER DIODES | |
3 | BZX384C3V0-G |
Vishay |
Small Signal Zener Diodes | |
4 | BZX384C3V0-V |
Vishay |
Small Signal Zener Diodes | |
5 | BZX384C3V3 |
Vishay |
Small Signal Zener Diodes |