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FQP22N50 |
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| Part Number | FQP22N50 |
| Manufacturer | Oucan Semi |
| Description | Product Summary The FQP22N50 & FQPF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC app... |
| Features |
rgy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
22 15
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds Thermal Characteristics
TL
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP22N50 65 0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
FQB22N50 500 ±30 22* 15* 88 7 735 1470 5 50 0.4
-55 to 150
300
FQB22N50 65 -2.5
FQPF22N50
22* 15*
39 0.3
FQPF22N50 65 -... |
| Document |
 FQP22N50 Data Sheet
PDF 359.59KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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