13007DL Jingdao Bipolar Junction Transistor Datasheet, en stock, prix

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13007DL

Jingdao
13007DL
13007DL 13007DL
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Part Number 13007DL
Manufacturer Jingdao
Description R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc...
Features Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-220 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Co...

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