K4H510438C-UC Samsung 512Mb C-die DDR SDRAM Datasheet, en stock, prix

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K4H510438C-UC

Samsung
K4H510438C-UC
K4H510438C-UC K4H510438C-UC
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Part Number K4H510438C-UC
Manufacturer Samsung
Description 32Mb x 16 64Mb x 8 128Mb x 4 DDR SDRAM VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ N...
Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge o...

Document Datasheet K4H510438C-UC Data Sheet
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