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1N3768 |
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| Part Number | 1N3768 |
| Manufacturer | Diotec Semiconductor |
| Description | 1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter 13 14 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spit... |
| Features |
tung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 IFAV IFRM IFSM IFSM i2t Tj TS 35 A 1) 80 A 1) 450 A 500 A 1000 A2s – 65…+175/C – 65…+175/C ) Valid, if the temp. of the stud is kept to 100/C – Gültig, wenn die Temp. am Gewinde auf 100/C gehalt... |
| Document |
 1N3768 Data Sheet
PDF 160.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N3765 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS |
|
| 2 | 1N3765 |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes |
|
| 3 | 1N3765 |
Microsemi |
Silicon Power Rectifier |
|
| 4 | 1N3765 |
Vishay |
Power Silicon Rectifier Diodes |
|
| 5 | 1N3765 |
America Semiconductor |
Silicon Standard Recovery Diode |
|