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SD5200 |
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| Part Number | SD5200 |
| Manufacturer | Siliconix |
| Description | The SILICONIX D-MOS SD5200 monolithic arrays of silicon. insulated-gate, field-effect transistors using the N-channel enchancement mode technology. This device is designed to handle a wide variety of ... |
| Features |
• Low Input Capacitance-2.4 pF • Low Feedback Capacitance-0.3 pF • Low Output Capacitance-1.3 pF • ±10V Analog Signal Range • Low Propagation Delay Time-600 ps • Low on Resistance-30n • Low Feedthrough and Feedback Transients • Ion Implanted for Greater Reliability • High Channel-to-Channellsolation-107 dB • Transient Protection for Gates I, N PACKAGE (TOP VIEW) DRAIN 4 NC GATE 4 SOURCE 4 SOURCE 3 ORDER PART NQ SD5200N (PLASTIC) 5052001 (SIDE BRAZE) 605200 3 0---1 3 o--:J -{4-1 1~0--04 1~1:.!.o4 I 6 0---1 6o--:J-* ~8 0--0 5 8 d!.1 I:.!.o 5 110--1 "o--j--t |
| Document |
 SD5200 Data Sheet
PDF 134.67KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
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| 2 | SD5200 |
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| 3 | SD520S |
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| 5 | SD520T |
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