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Features
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itance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
VEB = 9V, IC = 0
VCE = 5V, IC = 2A VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A
IC = 2A, IB = 0.4A IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω
Min. Typ. Max. Units
300 V 400 V
1 mA 8 60 5 30
1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µs 3 µs 0.7 µs
©2000 Fairchild Semiconductor International
Rev. A1, December 2000
Typical Characteristics
100
V = 5V CE
10
hFE, DC CURRENT GAIN
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E13006 Data Sheet
