PMZ350UPE nexperia P-channel MOSFET Datasheet, en stock, prix

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PMZ350UPE

nexperia
PMZ350UPE
PMZ350UPE PMZ350UPE
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Part Number PMZ350UPE
Manufacturer nexperia (https://www.nexperia.com/)
Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene...
Features
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 1.8 kV HBM
• Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -1.4 A Static characteristics RDSon drain-source on...

Document Datasheet PMZ350UPE Data Sheet
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