PSMN004-60B |
Part Number | PSMN004-60B |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communi... |
Features |
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
High frequency computer motherboard DC-to-DC convertors
OR-ing applicationss
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 75 A; VDS = 48 V; Tj = 25 °C; see Figure 11
... |
Document |
PSMN004-60B Data Sheet
PDF 712.23KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PSMN004-60B |
NXP Semiconductors |
N-Channel MOSFET | |
2 | PSMN004-60P |
NXP Semiconductors |
N-Channel MOSFET | |
3 | PSMN004-25B |
Philips |
N-channel logic level TrenchMOS transistor | |
4 | PSMN004-25P |
Philips |
N-channel logic level TrenchMOS transistor | |
5 | PSMN004-36B |
NXP Semiconductors |
N-Channel MOSFET |