BAV99LT1G |
Part Number | BAV99LT1G |
Manufacturer | MEI |
Description | MEI Lead Free RoHS Compliant Dual Series Switching Diode • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Uni... |
Features |
ce Junction to Ambient Junction and Storage Temperature
1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 ANODE 3 CAHODE/ANODE 2 CATHODE Symbol VR IF I FM(surge) V RRM I F(AV) I FRM I FSM Value 70 215 500 70 715 450 2.0 1.0 0.5 Unit Vdc mAdc mAdc V mA mA A Symbol PD R θJA PD R θJA T J , T stg Max 225 1.8 556 300 2.4 417 –65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C MEI Lead Free RoHS Compliant BAV99LT1G , SBAV99LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min OFF CHARACTERISTICS Rev... |
Document |
BAV99LT1G Data Sheet
PDF 359.15KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAV99LT1 |
Motorola Inc |
Dual Series Switching Diode | |
2 | BAV99LT1 |
ON Semiconductor |
Monolithic Dual Switching Diode | |
3 | BAV99LT1 |
Leshan Radio Company |
Dual Series Switching Diode | |
4 | BAV99L |
ON Semiconductor |
Dual Series Switching Diode | |
5 | BAV99 |
Toshiba |
Silicon Epitaxial Planar Switching Diodes |