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F14N05 |
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| Part Number | F14N05 |
| Manufacturer | HARRIS |
| Description | The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opt... |
| Features |
Packaging
• 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE • UIS Rating Curve • +175oC Operating Temperature Description The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor ... |
| Document |
 F14N05 Data Sheet
PDF 85.23KB |
| Distributor | Stock | Price | Buy |
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