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MA4AGBLP912 |
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| Part Number | MA4AGBLP912 |
| Manufacturer | MA-COM |
| Description | The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than co... |
| Features |
• Low Series Resistance • Low Capacitance • 5 Nanosecond Switching Speed • Can be Driven by a Buffered +5 V TTL • Silicon Nitride Passivation • Polyimide Scratch Protection • RoHS Compliant Applications • Aerospace & Defense • ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasi... |
| Document |
 MA4AGBLP912 Data Sheet
PDF 318.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MA4AGBLP912 |
Tyco Electronics |
AlGaAs Beam Lead PIN Diode |
|
| 2 | MA4AGBL912 |
MA-COM |
AlGaAs Beamlead PIN Diode |
|
| 3 | MA4AGCP910 |
Tyco Electronics |
AlGaAs Flip-Chip PIN Diode |
|
| 4 | MA4AGFCP910 |
Tyco Electronics |
AlGaAs Flip-Chip PIN Diode |
|
| 5 | MA4AGFCP910 |
MA-COM |
AlGaAs Flip Chip PIN Diodes |
|