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Si4410DY |
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| Part Number | Si4410DY |
| Manufacturer | International Rectifier |
| Description | This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this... |
| Features |
r Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter Maximum Junction-to-Ambient
Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20
-55 to + 150
Max. 50
Units V
A
W W/°C V/ns
mJ V °C
Units °C/W
1
11/22/99
Si4410DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 – – – – – – V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient – – – 0.029 – – – V/°C Refe... |
| Document |
 Si4410DY Data Sheet
PDF 88.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI4410DY |
NXP |
N-channel FET |
|
| 2 | Si4410DY |
Fairchild Semiconductor |
Single N-Channel MOSFET |
|
| 3 | Si4410DY |
Vishay |
N-Channel MOSFET |
|
| 4 | Si4410DYPbF |
International Rectifier |
Power MOSFET |
|
| 5 | SI4410BDY |
Vishay Siliconix |
N-Channel MOSFET |
|