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CGH40006S |
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| Part Number | CGH40006S |
| Manufacturer | Cree |
| Description | CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a gener... |
| Features |
• Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.0 GHz • 11 dB Small Signal Gain at 6.0 GHz • 8 W typical at PIN = 32 dBm • 65 % Efficiency at PIN = 32 dBm • 28 V Operation • 3mm x 3mm Package APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 3.1... |
| Document |
 CGH40006S Data Sheet
PDF 1.71MB |
| Distributor | Stock | Price | Buy |
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