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STH240N10F7-6 |
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| Part Number | STH240N10F7-6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | G(1) G(1) These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance... |
| Features |
Order code
VDS
RDS(on) max.
STH240N10F7-2 STH240N10F7-6
100 V
2.5 mΩ
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A D(TAB) D(TAB) Description G(1) G(1) These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(2, 3) for H2PAK-2 S(2, 3, 4, 5, 6, 7) for H2PAK-6 N-CHG1DTABS23_2_6 Product statu... |
| Document |
 STH240N10F7-6 Data Sheet
PDF 629.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STH240N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STH240N75F3-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | STH240N75F3-6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STH245N75F3-6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | STH24D12 |
TELEDYNE |
Solid-State Relays |
|