E2N60 ROUM 2A 600V N-channel Enhancement Mode Power MOSFET Datasheet, en stock, prix

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E2N60

ROUM
E2N60
E2N60 E2N60
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Part Number E2N60
Manufacturer ROUM
Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi...
Features
● Fast Switching
● Low ON Resistance(Rdson≤4.5Ω)
● Low Gate Charge(Typ:8nC)
● Low Reverse Transfer Capacitances(Typ:3.8pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor. 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Drian-Source Voltage Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)(Note 1) Single Pulse Avalanche...

Document Datasheet E2N60 Data Sheet
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