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F2N60 |
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| Part Number | F2N60 |
| Manufacturer | ROUM |
| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi... |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Drian-Source Voltage Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)(Note 1) Single Pulse Avalanche... |
| Document |
 F2N60 Data Sheet
PDF 1.42MB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | F2N60 |
Pan Jit International |
PJF2N60 |
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| 2 | F2N60 |
UTC |
600V N-CHANNEL POWER MOSFET |
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| 3 | F2N60 |
Red Diamond Optoelectronics |
N-CHANNEL POWER MOSFET |
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| 4 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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| 5 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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