MSP02120V1 |
Part Number | MSP02120V1 |
Manufacturer | Maple Semiconductor |
Description | MSP02120V1 MSP02120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Swit... |
Features |
-1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF
Applications
-Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting
Benefits
-Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses
Package
Case
Type :... |
Document |
MSP02120V1 Data Sheet
PDF 337.49KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MSP0203 |
MORESEMI |
P-Channel Enhancement Mode Power MOSFET | |
2 | MSP0204 |
MORESEMI |
P-Channel Enhancement Mode Power MOSFET | |
3 | MSP0204E |
MORESEMI |
P-Channel Enhancement Mode Power MOSFET | |
4 | MSP0205 |
MORESEMI |
P-Channel Enhancement Mode Power MOSFET | |
5 | MSP0205A |
MORESEMI |
P-Channel Enhancement Mode Power MOSFET |