SLF830S |
Part Number | SLF830S |
Manufacturer | Maple Semiconductor |
Description | This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch... |
Features |
- 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GD S
TO-220F
GDS
TO-220
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T C = 25℃) - Continuous (T C = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Sin... |
Document |
SLF830S Data Sheet
PDF 741.05KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLF830UZ |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLF80R240SJ |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLF80R380SJ |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLF80R500SJ |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLF80R600SJ |
Maple Semiconductor |
N-Channel MOSFET |