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SLD830S |
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| Part Number | SLD830S |
| Manufacturer | Maple Semiconductor |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
| Features |
- 5.0A, 500V, RDS(on)Typ= 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
D D-PAK
I-PAK
G
GS
GDS
S
Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted
Symbol
Parameter
SLU830S
SLD830S
VDSS
ID
IDM VGSS EAS
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
Drain Current
- Continuous (TC = 100℃) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche... |
| Document |
 SLD830S Data Sheet
PDF 646.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SLD830C |
Maple Semiconductor |
N-Channel MOSFET |
|
| 2 | SLD830UZ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 3 | SLD80R380SJ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 4 | SLD80R500SJ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 5 | SLD80R600SJ |
Maple Semiconductor |
N-Channel MOSFET |
|