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SLD8N65U |
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| Part Number | SLD8N65U |
| Manufacturer | Maple Semiconductor |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
| Features |
- 7.5A, 650V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
D-PAK
I-PAK
G
GS
GDS
S
Absolute Maximum Ratings TC = 25℃ unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Single... |
| Document |
 SLD8N65U Data Sheet
PDF 790.30KB |
| Distributor | Stock | Price | Buy |
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