SLD8N60U |
Part Number | SLD8N60U |
Manufacturer | Maple Semiconductor |
Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
Features |
- 7.5A, 600V, RDS(on) = 1.3Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
D-PAK
I-PAK
G
GS
GDS
S
Absolute Maximum Ratings TC = 25℃ unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Singl... |
Document |
SLD8N60U Data Sheet
PDF 325.26KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLD8N65U |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLD80R380SJ |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLD80R500SJ |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLD80R600SJ |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLD80R850SJ |
Maple Semiconductor |
N-Channel MOSFET |