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HM2300B |
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| Part Number | HM2300B |
| Manufacturer | H&M Semiconductor |
| Description | The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in... |
| Features |
● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram 2300 Marking and pin assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2300 HM2300B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VG... |
| Document |
 HM2300B Data Sheet
PDF 390.87KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM2300 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 2 | HM2300C |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | HM2300D |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | HM2300DR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | HM2300PR |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
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