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2N657 |
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| Part Number | 2N657 |
| Manufacturer | Motorola |
| Description | 2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. • High Collector·Emitter Breakdo... |
| Features |
or-Base Breakdown Voltage
BVCBO
(lC = 100~Ade, IE = 01
2N656 2N657
60
-
100
-
Emitter-Base Breakdown Voltage liE = 250~Ade, IC = 01
BVEBO B.O
-
Collector Cutoff Current (VCB = 30 Vde, IE = 01
ICBO
-
10
ON CHARACTERISTICS DC Current Gain(1)
(lC = 200 mAde, VCE = 10 Vdel
Collector-Emitter Saturation Voltage(1) lic = 200 mAde, IB = 40 mAdel
hFE
30
90
VCE(satl
-
4.0
SMALL ·SIGNAL CHARACTERISTICS Input Impedance(1) liB =8.0 mAde, VCE = 10 Vdel Unit Vde Vde Vde ~Ade Vde *Indicates JEDEC Registered Data. (1)Pulse Test: Pulse Length = 300 MS, Duty Cycle '$ 2.0%. 2-56 ::"wj1=1 ... |
| Document |
 2N657 Data Sheet
PDF 58.33KB |
| Distributor | Stock | Price | Buy |
|---|
