2N838 |
Part Number | 2N838 |
Manufacturer | Motorola |
Description | 2N838 (GERMANIUM) " CASE 22 (TO·18) Collector connected to CBse PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-... |
Features |
= 25°C unless otherwise notedl
Characteristic
Collector-Base Breakdown Voltage (Ic =100 fJ.Adc, IE =0)
Collector-Emitter Breakdown Voltage (IC=100 J1Adc, VEB=O)
Emitter-Base Breakdown Voltage (IE = 100 fJ. Adc, IC = 0)
Collector Latch-up Voltage (see Figure 2)
Collector-Emitter Cutoff Current (VCE =15 Vdc, VEB =0)
Collector-Base Cutoff Current (VCB=15V, IE = 0)
DC Forward Current Transfer Ratio (IC=10mAdc, VCE =0.3Vdc)
Collector-Emitter Saturation Voltage (Ic =10 mAdc, IB =3.3 mAdc)
Base-Emitter Voltage
(Ie = 10 mAdc, IB =3.3 mAdc)
Small-Signal Forward Current Transfer Ratio (IC=10 rnA, VCE=I... |
Document |
2N838 Data Sheet
PDF 106.62KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N834 |
New Jersey Semi-Conductor |
NPN HIGH SPEED SATURATED LOGIC SWITCHES | |
2 | 2N834 |
Motorola |
NPN silicon epitaxial transistors | |
3 | 2N835 |
Motorola |
NPN silicon epitaxial transistors | |
4 | 2N80 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2N80 |
Unisonic Technologies |
800V N-CHANNEL POWER MOSFET |