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2N3020 |
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| Part Number | 2N3020 |
| Manufacturer | Motorola |
| Description | 30 19 2N (SILICON) 2N3020 CASE 31 (TO·S) Collector connected to case NPN silicon annular transistors designed for highcurrent, high-frequency amplifier applications. MAXIMUM RATINGS Rating Collec... |
| Features |
Cutoff Current
(VBE = 5 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain 11
(IC = 0.1 mAde, VCE = 10 Vde)
,
(IC = 10 mAc, VeE = 10 Vde)
(IC = 150 mAde, VCE = HI. Vde)
(Ie = 150 mAde, VCE = 10 Vde, TC = -55"C) (IC = 500 mAde, VCE = 10 Vde)
(IC = 1 Adc, VCE = 10 Vde)
Collector-Emitter Saturation Voltage 111
(IC = l50mAde, IB = 15 mAde) (IC = 500 mAde, IB = 50 mAde)
Base-Emitter Saturation Voltage'{l1
(Ie = 150mAde, Is = 15 mAde)
2N3019 2N3020
2N3019 2N3020
2N3019 2N3020
2N3019
2N3019 2N3020
Both Types
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 50 mAde, VCE = 10 Vde, f... |
| Document |
 2N3020 Data Sheet
PDF 91.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3020 |
Micro Electronics |
NPN Silicon Transistor |
|
| 2 | 2N3020 |
Central Semiconductor |
NPN Transistor |
|
| 3 | 2N3020 |
Comset Semiconductor |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 4 | 2N3020 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 5 | 2N3020 |
Seme LAB |
Bipolar NPN Device |
|