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SH5126SV325816NI |
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| Part Number | SH5126SV325816NI |
| Manufacturer | SMART Modular |
| Description | 512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, NonECC, 256Mx8 Based, PC3L-12800, DDR3L-1600-11-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free & RoHS Compliant. Device Vendor Nanya, Rev. I NT5CC256M8IN-DI... |
| Features |
• Standard = JEDEC • ZQ calibration supported • Configuration = Non-ECC • On chip DLL align DQ, DQS and DQS transition • Number of Module Ranks = 2 with CK transition • Number of Devices = 16 • DM write data-in at both the rising and falling • VDD = VDDQ = 1.35V/1.5V • VDDSPD = 3.0V to 3.6V • Cycle Time = 1.25ns • CAS Latency = 5, 6, 7, 8, 9, 10, 11 • Additive Latency = 0, CL-1, and CL-2 • CAS Write Latency (CWL) = 5, 6, 7, 8 • Burst Length = BC4, BL8, BC4 or BL8 (on the fly) • Burst Type = Nibble Sequential & Interleave Mode edges of the data strobe • All addresses and control input... |
| Document |
 SH5126SV325816NI Data Sheet
PDF 426.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SH5126SV351816-SE |
SMART Modular |
4GB (512Mx64) DDR3 SDRAM Module |
|
| 2 | SH5127UD351838SE |
SMART Modular |
4GB (512Mx72) DDR3 SDRAM Module |
|
| 3 | SH50D13A |
Toshiba |
High Speed Thyristor |
|
| 4 | SH50F13A |
Toshiba |
High Speed Thyristor |
|
| 5 | SH50H13A |
Toshiba |
High Speed Thyristor |
|