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PDP4960 |
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| Part Number | PDP4960 |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
40V, 150A, RDS(ON) =3.8mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Applications MB / VGA / Vcore POL Applications SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Puls... |
| Document |
 PDP4960 Data Sheet
PDF 674.24KB |
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